CMSD2005S
SURFACE MOUNT
DUAL, IN SERIES
HIGH VOLTAGE
SILICON SWITCHING DIODES
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMSD2005S
contains two (2) High Voltage Silicon Switching
Diodes, manufactured by the epitaxial planar process,
epoxy molded in a SOT-323 surface mount package,
designed for applications requiring high voltage
capability.
MARKING CODE: B5D
SOT-323 CASE
MAXIMUM RATINGS: (TA=25 °C)
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Peak Repetitive Reverse Current
Continuous Forward Current
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=1.0μs
Peak Forward Surge Current, tp=1.0s
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
ELECTRICAL
SYMBOL
IR
IR
BVR
VF
VF
VF
CT
trr
SYMBOL
VR
VRRM
IRRM
IF
IFRM
IFSM
IFSM
PD
TJ, Tstg
ΘJA
300
350
200
225
625
4.0
1.0
275
-65 to +150
455
UNITS
V
V
mA
mA
mA
A
A
mW
°C
°C/W
CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
TEST CONDITIONS
MIN
MAX
VR=280V
100
VR=280V, TA=150°C
100
IR=100μA
350
IF=20mA
0.87
IF=100mA
1.0
IF=200mA
1.25
VR=0, f=1.0MHz
5.0
IR=IF=30mA, Irr=3.0mA, RL=100Ω
50
UNITS
nA
μA
V
V
V
V
pF
ns
R1 (8-February 2010)
CMSD2005S
SURFACE MOUNT
DUAL, IN SERIES
HIGH VOLTAGE
SILICON SWITCHING DIODES
SOT-323 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
LEAD CODE:
1) Anode D2
2) Cathode D1
3) Anode D1, Cathode D2
MARKING CODE: B5D
R1 (8-February 2010)
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REQUESTING PRODUCT PLATING
1. If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when
ordering (example: 2N2222A TIN/LEAD).
2. If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number
when ordering (example: 2N2222A PBFREE).
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